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IRF6622PBF IRF6622TRPbF
DirectFET Power MOSFET
l l l l l l l l l
PD - 97244
RoHs Compliant Lead-Free (Qualified up to 260C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques
Typical values (unless otherwise specified)
VDSS Qg
tot
VGS Qgd
3.8nC
RDS(on) Qgs2
1.6nC
RDS(on) Qoss
7.7nC
25V max 20V max 4.9m@ 10V 6.8m@ 4.5V
Qrr
7.1nC
Vgs(th)
1.8V
11nC
SQ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP
DirectFET ISOMETRIC
Description
The IRF6622PBF combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6622PBF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6622PBF has been optimized for parameters that are critical in synchronous buck converter's ControlFET sockets.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR
20
Typical RDS(on) (m)
Max.
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche CurrentAg
g
e e f
h
VGS, Gate-to-Source Voltage (V)
25 20 15 12 59 120 13 12
6.0 5.0 4.0 3.0 2.0 1.0 0.0 0 2 4 6 8 10 12 VDS= 20V VDS= 13V
A
mJ A
ID= 12A
15 10 5 T J = 25C 0 3 4 5 6 7 8
ID = 15A
VDS= 5.0V
T J = 125C
9
10
14
VGS, Gate -to -Source Voltage (V)
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
Fig 1. Typical On-Resistance Vs. Gate Voltage
TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.18mH, RG = 25, IAS = 12A.
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07/18/06
IRF6622PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
25 --- --- --- 1.35 --- --- --- --- --- 55 --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. Max. Units
--- 17 4.9 6.8 1.8 -5.9 --- --- --- --- --- 11 2.5 1.6 3.8 3.1 5.4 7.7 1.8 9.4 16 13 4.6 1450 380 210 --- --- 6.3 8.9 2.35 --- 1.0 150 100 -100 --- 17 --- --- --- --- --- --- 3.1 --- --- --- --- --- --- --- pF ns nC
Conditions
VGS = 0V, ID = 250A V mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 15A i VGS = 4.5V, ID = 12A i V mV/C A nA S VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 13V, ID = 12A VDS = 13V nC VGS = 4.5V ID = 12A See Fig. 15 VDS = 16V, VGS = 0V VDD = 13V, VGS = 4.5V i ID = 12A Clamped Inductive Load See Fig. 16 & 17 VGS = 0V VDS = 13V = 1.0MHz VDS = VGS, ID = 25A
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) d Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- --- --- --- --- 10 7.1 120 1.0 15 11 V ns nC
Min.
---
Typ. Max. Units
--- 2.7 A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 12A, VGS = 0V i TJ = 25C, IF = 12A di/dt = 500A/s i See Fig. 18
Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%.
Notes:
2
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IRF6622PBF
Absolute Maximum Ratings
PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range
e e f
Parameter
Max.
2.2 1.4 34 270 -40 to + 150
Units
W
C
Thermal Resistance
RJA RJA RJA RJC RJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor
em km lm fm
Parameter
Typ.
--- 12.5 20 --- 1.0 0.017
Max.
58 --- --- 3.7 ---
Units
C/W
eA
W/C
100 D = 0.50
Thermal Response ( Z thJA )
10
0.20 0.10 0.05
R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 4 R5 R5 A 1 2 3 4 5 5 A
Ri (C/W)
1.620 2.141 22.289 20.046 11.914
i (sec)
0.000126 0.001354 0.375850 7.41
1
0.02 0.01
J
Ci= i/Ri Ci= i/Ri
0.1
SINGLE PULSE ( THERMAL RESPONSE )
99 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
0.01 1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. Notes:
R is measured at TJ of approximately 90C.
Surface mounted on 1 in. square Cu (still air).
Mounted to a PCB with small clip heatsink (still air)
Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)
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IRF6622PBF
1000
TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V
1000
TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
BOTTOM
10
BOTTOM
1 2.5V
10 2.5V 1
0.1
60s PULSE WIDTH
0.01 0.1 1 Tj = 25C 10 100 1000
0.1 1
60s PULSE WIDTH
Tj = 150C 10 100 1000
Fig 4. Typical Output Characteristics
1000 VDS = 15V 60s PULSE WIDTH 100 T J = 150C 10 T J = 25C T J = -40C 1
VDS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 5. Typical Output Characteristics
2.0 ID = 15A
Typical RDS(on) (Normalized)
ID, Drain-to-Source Current ()
1.5
V GS = 10V
1.0
V GS = 4.5V 0.5
0.1 1 2 3 4 5
-60 -40 -20 0
20 40 60 80 100 120 140 160
Fig 6. Typical Transfer Characteristics
10000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 7. Normalized On-Resistance vs. Temperature
50 T J = 25C 40
Typical RDS(on) ( m)
C oss = C ds + C gd
C, Capacitance(pF)
Ciss 1000 Coss Crss
30
Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 10V
20
10
100 1 10 VDS, Drain-to-Source Voltage (V) 100
0 0 20 40 60 80 100 120
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance Vs. Drain Current and Gate Voltage
ID, Drain Current (A)
4
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IRF6622PBF
1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100sec
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
10
T J = 150C T J = 25C T J = -40C
1
1 VGS = 0V 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V)
0.1
T A = 25C
1msec 10msec
T J = 150C
Single Pulse 0.01 0.01 0.10 1.00 10.00
100.00
Fig 10. Typical Source-Drain Diode Forward Voltage
60
Typical VGS(th) Gate threshold Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) ID = 25A
50
ID, Drain Current (A)
40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (C)
ID = 50A
ID = 100A ID = 250A ID = 1mA ID = 1.0A
Fig 12. Maximum Drain Current vs. Case Temperature
60
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID 3.7A 5.3A BOTTOM 12A TOP
50 40 30 20 10 0 25 50 75
100
125
150
Starting T J , Junction Temperature (C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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IRF6622PBF
Current Regulator Same Type as D.U.T.
Id Vds
50K 12V .2F .3F
Vgs
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V(BR)DSS
15V
tp
DRIVER
VDS
L
VGS RG
D.U.T
IAS
+ V - DD
A
20V
tp
0.01
I AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
LD VDS
90%
+
VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
VDS
10%
VGS
td(on) tr td(off) tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
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IRF6622PBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs
DirectFET Substrate and PCB Layout, SQ Outline (Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
G = GATE D = DRAIN S = SOURCE
D G D S
D
D
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IRF6622PBF
DirectFET Outline Dimension, SQ Outline (Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC MAX CODE MIN 4.85 A 4.75 3.95 B 3.70 2.85 C 2.75 0.45 D 0.35 0.52 E 0.48 0.82 F 0.78 0.92 G 0.88 0.82 H 0.78 0.97 K 0.93 2.10 L 2.00 M 0.616 0.676 R 0.020 0.080 0.17 P 0.08 IMPERIAL MIN MAX 0.187 0.191 0.146 0.156 0.108 0.112 0.014 0.018 0.019 0.020 0.031 0.032 0.035 0.036 0.031 0.032 0.037 0.038 0.079 0.083 0.0235 0.0274 0.0008 0.0031 0.003 0.007
DirectFET Part Marking
8
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IRF6622PBF
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6622TRPBF). For 1000 parts on 7" reel, order IRF6622TR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC METRIC CODE MIN MAX MIN MAX MIN MIN MAX MAX A 6.9 N.C 12.992 330.0 177.77 N.C N.C N.C B 0.75 0.795 N.C 20.2 19.06 N.C N.C N.C C 0.53 0.504 0.50 12.8 13.5 0.520 13.2 12.8 D 0.059 0.059 1.5 N.C 1.5 N.C N.C N.C E 2.31 3.937 N.C 100.0 58.72 N.C N.C N.C F N.C N.C N.C 0.53 N.C 0.724 18.4 13.50 G 0.47 0.488 N.C 12.4 11.9 0.567 14.4 12.01 H 0.47 0.469 11.9 N.C 11.9 0.606 15.4 12.01
Loaded Tape Feed Direction
CODE A B C D E F G H
DIMENSIONS METRIC IMPERIAL MIN MAX MIN MAX 0.311 0.319 8.10 7.90 0.154 3.90 0.161 4.10 0.469 0.484 11.90 12.30 0.215 0.219 5.55 5.45 0.158 4.00 0.165 4.20 0.197 5.00 0.205 5.20 0.059 1.50 N.C N.C 0.059 1.50 0.063 1.60
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/06
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